| PART |
Description |
Maker |
| CN-0187 ADL5502 ADP121 |
Crest Factor, Peak, and RMS RF Power Measurement Circuit Optimized for High Speed, Low Power, and Single 3.3 V Supply
|
Analog Devices
|
| IP2003NBSP IP2003 |
Fully optimized solution for high current synchronous buck multiphase applications in a LGA power block.
MULTIPHASE OPTIMIZED LGA POWER BLOCK
|
IRF[International Rectifier]
|
| AUIRF7669L2TR1 |
100V Automotive Grade Single N-Channel HEXFET Power MOSFET rated at 114.0 amperes optimized with low on resistance.
|
International Rectifier
|
| AUIRF7799L2TR |
A 250V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 125 amperes optimized with low on resistance
|
International Rectifier
|
| ISL9N306AS3ST ISL9N306AP3 ISL9N306AS3STNL |
N-Channel Logic Level PWM Optimized UltraFET TrenchPower MOSFET
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| M65KA128AE |
Low Power SDRAM
|
STMicroelectronics
|
| ISL9N307AD3ST |
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| EM6A9325BG-1H/LG |
4M x 32 Low Power SDRAM (LPSDRAM)
|
Etron Technology, Inc.
|
| EM669325BG-8G EM669325BG-7.5G EM669325 EM669325BG- |
4M x 32 Low Power SDRAM (LPSDRAM)
|
ETRON[Etron Technology, Inc.]
|
| EM669325BG-1H/LG |
4M x 32 Low Power SDRAM (LPSDRAM)
|
Etron Technology, Inc.
|
| MT46H64M16LFBF-6 |
Mobile Low-Power DDR SDRAM
|
Micron Technology
|
